Silicon Metals
North Cleanroom
1.756
Atomic Layer Deposition
A training video for how to do ALD deposition using a Fiji ALD:
low- to mid-temperature (100-250 C) deposition system.
Up to 8” wafer.
Precursors:
Trimethylaluminun,
Tetrakis-dimethylamino Hafnium,
tris dimethylamino Silane,
Platinum,
Nitride amedinate
lead to the following films:
Al2O3, HfO2 , NiO, Ni, TiN and SiO2.
Catalyst precursor: water
Carrier Gas: Ar
Special featuress:
- Ar booster for Amedinate precursor line
- Ozone generator
Remote plasma: NH3, O2, Ar, N2, H2, CF4
NH3, O2, Ar, N2, H2, CF4
Compatible Materials:
CMOS compatible
Incompatible Materials:
Photo Resist, Gold, Copper